Infineon IPD65R400CE: Advanced 650V CoolMOS™ CE Power Transistor for High-Efficiency Applications

Release date:2025-11-10 Number of clicks:66

Infineon IPD65R400CE: Advanced 650V CoolMOS™ CE Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands semiconductors that deliver superior performance. The Infineon IPD65R400CE, a 650V CoolMOS™ CE power transistor, stands at the forefront of this innovation, engineered specifically to meet the rigorous requirements of high-efficiency switched-mode power supplies (SMPS) and other demanding applications.

At the heart of this device is Infineon's revolutionary CoolMOS™ CE (Civil Emergency) technology. This proprietary superjunction (SJ) technology represents a significant leap beyond standard MOSFETs. It is meticulously designed to achieve an exceptional balance between low on-state resistance (R DS(on)) and low gate charge (Q G). The IPD65R400CE boasts a remarkably low maximum R DS(on) of 400 mΩ, which directly translates to minimized conduction losses. Concurrently, its low gate charge ensures swift switching transitions, drastically reducing switching losses. This dual optimization is critical for achieving peak efficiency across a wide load range, particularly in hard-switching topologies like power factor correction (PFC) and flyback converters.

The benefits of this technology extend beyond raw efficiency numbers. By generating less wasted energy as heat, the IPD65R400CE enhances thermal performance and system reliability. This allows designers to either create more compact form factors by using smaller heatsinks or to push the power limits of existing designs with greater confidence. The 650V voltage rating provides a robust safety margin, enhancing resilience against voltage spikes and ensuring stable operation even in harsh electrical environments. This makes it an ideal choice for mains-powered applications including server and telecom SMPS, industrial motor drives, and lighting ballasts.

Furthermore, the device offers excellent reverse recovery characteristics, contributing to lower electromagnetic interference (EMI) and simplifying the task of meeting global compliance standards. Its high ruggedness and avalanche energy capability further solidify its reputation for durability in demanding circuit conditions.

ICGOO

D FIND

In summary, the Infineon IPD65R400CE is a pinnacle of power transistor design, leveraging advanced CoolMOS™ CE technology to set a new benchmark for efficiency and power density. Its optimal switching characteristics and high voltage robustness make it an indispensable component for engineers striving to create the next generation of high-performance, reliable, and energy-conscious power systems.

Keywords: CoolMOS™ CE, High-Efficiency, Low On-Resistance, 650V Rating, Power Transistor

Home
TELEPHONE CONSULTATION
Whatsapp
Contact Us