Infineon IPL65R195C7: A 195 mΩ StrongIRFET™ Power MOSFET for High-Efficiency Applications

In the relentless pursuit of higher efficiency and power density across industries like automotive, industrial drives, and power supplies, the choice of switching components is paramount. The Infineon IPL65R195C7 stands out as a premier solution, a Power MOSFET engineered to meet these escalating demands. This device, part of Infineon's esteemed StrongIRFET™ family, is characterized by an ultra-low on-state resistance (RDS(on)) of just 195 mΩ, which serves as the cornerstone of its high-performance capabilities.

The primary advantage of such a low RDS(on) is the drastic reduction in conduction losses. When a MOSFET is in its on-state, it behaves like a resistor. The lower this resistance, the less power is dissipated as heat during current flow. The IPL65R195C7, with its 195 mΩ rating, ensures minimal energy is wasted, directly translating into cooler operation, higher overall system efficiency, and the potential for reduced cooling requirements. This makes it an ideal candidate for high-current applications such as DC-DC converters, motor control units, and load switch systems.

Beyond its low resistance, this MOSFET is built on advanced technology that provides exceptional switching performance. The device is optimized for fast switching speeds, which is crucial for high-frequency operation in modern switch-mode power supplies (SMPS). Faster switching allows for the use of smaller passive components like inductors and capacitors, thereby increasing power density—a key design goal for today's compact electronic equipment. Furthermore, the IPL65R195C7 boasts robust avalanche ruggedness and a high body diode dv/dt capability, enhancing its reliability in harsh operating environments and ensuring longevity in demanding applications like automotive systems.

The component is offered in the space-saving D2PAK 7-pin package. This package type offers a superior thermal performance compared to standard D2PAK versions, thanks to an additional source sense pin that allows for a more efficient connection to the PCB. This improves heat dissipation, allowing the device to handle high power levels without compromising performance or safety.

ICGOODFIND: The Infineon IPL65R195C7 is a high-efficiency Power MOSFET that sets a high bar for performance. Its ultra-low 195 mΩ RDS(on) is instrumental in minimizing conduction losses, leading to cooler and more efficient systems. Coupled with excellent switching characteristics and superior avalanche ruggedness, it provides designers with a reliable and robust solution for creating compact, high-power, and high-efficiency applications across the automotive and industrial sectors.

Keywords: StrongIRFET™, Ultra-low RDS(on), High-Efficiency, Power MOSFET, Avalanche Ruggedness.