Infineon AUIRF7342QTR: High-Performance Dual N-Channel MOSFET for Automotive and Industrial Applications

In the demanding worlds of automotive and industrial electronics, power efficiency, reliability, and compactness are paramount. The Infineon AUIRF7342QTR stands out as a high-performance dual N-channel MOSFET specifically engineered to meet these rigorous challenges. This device integrates two advanced MOSFETs in a single, space-saving PQFN 5x6 package, offering designers a powerful solution to drive motors, manage power distribution, and control loads with exceptional efficiency.

A key strength of the AUIRF7342QTR lies in its ultra-low on-state resistance (R DS(on)) of just 2.8 mΩ (max) per channel at 10 V. This remarkably low resistance directly translates to minimized conduction losses, which is critical for improving overall system efficiency and reducing heat generation. For battery-operated systems, this efficiency is a significant advantage, potentially extending operational life and reducing the need for large heat sinks.

The device is AEC-Q101 qualified, guaranteeing its robustness and reliability for the harsh environment of automotive applications. It is engineered to withstand high inrush currents, a common scenario when starting motors or charging capacitive loads. Furthermore, its avalanche ruggedness ensures it can handle voltage spikes and transient events that are typical in automotive and industrial power networks, providing an essential layer of protection and durability.

The dual N-channel configuration in a single package allows for more compact and simplified PCB designs. This is particularly beneficial for creating high-efficiency half-bridge and full-bridge topologies in DC-DC converters and motor drive circuits. By reducing the component count and board space, the AUIRF7342QTR enables engineers to develop smaller, lighter, and more cost-effective systems without compromising on performance.

ICGOOODFIND: The Infineon AUIRF7342QTR is a superior dual MOSFET that excels in power density and thermal performance. Its combination of ultra-low R DS(on), automotive-grade qualification, and avalanche energy capability makes it an ideal choice for designers tackling complex power management challenges in applications such as electric power steering (EPS), brake systems, industrial motor controls, and robust DC-DC converters.

Keywords: Automotive MOSFET, Low R DS(on), AEC-Q101 Qualified, Dual N-Channel, Power Efficiency