Infineon BSZ075N08NS5: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion
In the realm of modern power electronics, achieving higher efficiency and power density is a paramount goal. The Infineon BSZ075N08NS5 stands out as a premier solution, engineered to meet these demanding requirements. As part of Infineon's cutting-edge OptiMOS™ 5 80 V family, this power MOSFET is designed to deliver exceptional performance in a wide array of applications, from server and telecom power supplies to industrial motor drives and solar inverters.
The core of this device's superiority lies in its advanced semiconductor technology. Built upon an ultra-fine stripe and trench technology, it achieves an exceptionally low on-state resistance (RDS(on)) of just 0.75 mΩ (max). This minimal resistance is crucial for reducing conduction losses, which directly translates into higher efficiency and less wasted energy in the form of heat. Furthermore, the MOSFET boasts an outstanding figure-of-merit (FOM), which signifies an optimal balance between low gate charge (Qg) and low RDS(on). This combination ensures not only efficient switching but also enables faster switching frequencies, allowing designers to use smaller passive components like inductors and capacitors, thereby increasing the overall power density of their systems.
The benefits extend beyond raw electrical characteristics. The BSZ075N08NS5 is housed in a SuperSO8 package, which offers a significantly reduced footprint compared to standard D2PAK packages. Despite its compact size, this package provides superior thermal performance and very low parasitic inductance, which is critical for managing voltage spikes and ensuring stable, reliable operation in high-speed switching environments. The device's enhanced avalanche ruggedness and intrinsic body diode with soft-recovery characteristics further contribute to its robustness, making it suitable for harsh operating conditions where reliability is non-negotiable.
Designers will appreciate the flexibility this component offers. Its high-performance specs allow for the creation of more efficient and compact power conversion stages, whether used in synchronous rectification, DC-DC converters, or as part of a motor control bridge. By minimizing switching and conduction losses, the BSZ075N08NS5 helps systems run cooler, which can simplify thermal management, reduce the need for large heatsinks, and ultimately lead to lower system costs and longer product lifespans.
ICGOOODFIND: The Infineon BSZ075N08NS5 OptiMOS 5 MOSFET is a benchmark in power semiconductor technology, offering a powerful blend of ultra-low RDS(on), superior switching performance, and excellent thermal characteristics in a compact package. It is an ideal choice for engineers aiming to push the boundaries of efficiency and power density in their next-generation power conversion designs.
Keywords: OptiMOS 5, Low RDS(on), Power Efficiency, SuperSO8 Package, High Power Density.
